NOW A DAYS TECHNOLOGY HAS BEEN GOING TOWARDS FASTING BUT NOW THERE IS ALSO SOME DELAY WHICH IS PROBLEMATIC. ALL THE DELAY OCCUR DUE TO BEHAVIOUR OF ELECTRON, CHARGING AND DISCHARGING AND DEPILITION LAYER WHICH LEAD TO FORMING OF CAPACITOR AND THERE IS DELAY.
IN PRESENT FET IS USE IN ALL ELECTRONIC CIRCUIT AND TRANSISTOR ALSO. BUT THE TECHNOLOGY WHICH I AM INTRODUCING HERE LEAD TO OVERCOME THE DELAY. BASICALLY THESE COMPONENT USED IN DIGITAL CIRCUIT LIKE MOS CMOS TO SWITCHING OF CIRCUIT.
IN PRESENT ALL THE SWITCHING CHARACTERISTICS BASED ON GATE VOLTAGE TO TRIGGER IT AND VALUE OF THIS CUTIN VOLTAGE MUST BE IN LIMIT TO COMPLETE THE CIRCUIT AND MUST NOT TOO MUCH TO DESTROY IT CHERSTICS (RELATING PINCH OF REGION) HERE THE VALUE DEPEND ON THE QUANTITY OF CHARGE AND VOLTAGE.
WE ALL OF KNOW THAT ACCORDING TO PHYSICS ELECTRON HAVE SPIN MOTION. IF WE PICK UP REQUIRED CONDITION FROM THE SPIN OF ELECTRON THEN WE ARE GOING VERY MUCH TOWARDS TO DIGITAL WORLD. BECAUSE ELECTRON HAVE TWO SPIN IF ONE IS IN CLOCKWISE THEN OTHER WILL BE IN VICE VERSA.
FOR THIS TECHNOLOGY WE REQUIRED A MATTER WHICH HAS ALIGNMENT OF ATOM AND SPIN ACCORDING TO APPLIED VOLTAGE.
NOW A VERY BASIC QUESTION COMES THAT WHY ELECTRON SPIN: THE CAUSE IS THAT WHEN A EXTERNAL FIELD APPLY THEN THE DENSITY OF ELECTRON CHANGES AND MEGNUS EFFECT CREATE SO THE ELECTRON SPIN TOWARDS LOW PRESSURE.
NOW A FERROMAGNETIC SUBTRACT IS USED TO ALIGNMENT OF ELECTRONS AND IF WE INCREASE THE NO OF LAYER THEN IF THE ALIGNMENT IS IN SAME DIRECTION THEN PRESENT LOW RESISTANCE AND IF OPPOSITE THEN HIGH RESISTANCE. The simplest method of generating a spin-polarised current in a metal is to pass the current through a ferromagnetic material. The most common application of this effect is a giant magnetoresistance (GMR) device. A typical GMR device consists of at least two layers of ferromagnetic materials separated by a spacer layer. When the two magnetization vectors of the ferromagnetic layers are aligned, the electrical resistance will be lower (so a higher current flows at constant voltage) than if the ferromagnetic layers are anti-aligned. This constitutes a magnetic field sensor.
USING THIS TECHNOLOGY THE PRESENT LIMITATION LIKE HIGH TEMPERATURE AND INCREASE HIGH CUTIN VOLTAGE.
THUS IN PREVIOUS TECHNOLOGY THE SWITCHING DEPEND ON APPLIED VOLTAGE WITH MAXIMUM AND MINIMUM LIMIT BUT HERE AS MUCH VOLTAGE OR MUCH TEMPERATURE MUCH SPIN AND FASTING THE TECHNOLOGY.
BASIC VIEW OF DEVICES:-
IN PRESENT FET IS USE IN ALL ELECTRONIC CIRCUIT AND TRANSISTOR ALSO. BUT THE TECHNOLOGY WHICH I AM INTRODUCING HERE LEAD TO OVERCOME THE DELAY. BASICALLY THESE COMPONENT USED IN DIGITAL CIRCUIT LIKE MOS CMOS TO SWITCHING OF CIRCUIT.
IN PRESENT ALL THE SWITCHING CHARACTERISTICS BASED ON GATE VOLTAGE TO TRIGGER IT AND VALUE OF THIS CUTIN VOLTAGE MUST BE IN LIMIT TO COMPLETE THE CIRCUIT AND MUST NOT TOO MUCH TO DESTROY IT CHERSTICS (RELATING PINCH OF REGION) HERE THE VALUE DEPEND ON THE QUANTITY OF CHARGE AND VOLTAGE.
WE ALL OF KNOW THAT ACCORDING TO PHYSICS ELECTRON HAVE SPIN MOTION. IF WE PICK UP REQUIRED CONDITION FROM THE SPIN OF ELECTRON THEN WE ARE GOING VERY MUCH TOWARDS TO DIGITAL WORLD. BECAUSE ELECTRON HAVE TWO SPIN IF ONE IS IN CLOCKWISE THEN OTHER WILL BE IN VICE VERSA.
FOR THIS TECHNOLOGY WE REQUIRED A MATTER WHICH HAS ALIGNMENT OF ATOM AND SPIN ACCORDING TO APPLIED VOLTAGE.
NOW A VERY BASIC QUESTION COMES THAT WHY ELECTRON SPIN: THE CAUSE IS THAT WHEN A EXTERNAL FIELD APPLY THEN THE DENSITY OF ELECTRON CHANGES AND MEGNUS EFFECT CREATE SO THE ELECTRON SPIN TOWARDS LOW PRESSURE.
NOW A FERROMAGNETIC SUBTRACT IS USED TO ALIGNMENT OF ELECTRONS AND IF WE INCREASE THE NO OF LAYER THEN IF THE ALIGNMENT IS IN SAME DIRECTION THEN PRESENT LOW RESISTANCE AND IF OPPOSITE THEN HIGH RESISTANCE. The simplest method of generating a spin-polarised current in a metal is to pass the current through a ferromagnetic material. The most common application of this effect is a giant magnetoresistance (GMR) device. A typical GMR device consists of at least two layers of ferromagnetic materials separated by a spacer layer. When the two magnetization vectors of the ferromagnetic layers are aligned, the electrical resistance will be lower (so a higher current flows at constant voltage) than if the ferromagnetic layers are anti-aligned. This constitutes a magnetic field sensor.
USING THIS TECHNOLOGY THE PRESENT LIMITATION LIKE HIGH TEMPERATURE AND INCREASE HIGH CUTIN VOLTAGE.
THUS IN PREVIOUS TECHNOLOGY THE SWITCHING DEPEND ON APPLIED VOLTAGE WITH MAXIMUM AND MINIMUM LIMIT BUT HERE AS MUCH VOLTAGE OR MUCH TEMPERATURE MUCH SPIN AND FASTING THE TECHNOLOGY.
BASIC VIEW OF DEVICES:-
Maan Gaye Ustad Aapki parkhi nazar aur nirma supar dono ko....
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